NSTL国家科技图书文献中心

1. Joint impact of self-heating effect and lattice stress on the design performance of Si_(1−x)Ge_x FinFET with advanced process integration NSTL国家科技图书文献中心

Pan Zhao | TaoYu Zhou ... - 《Semiconductor Science and Technology》 - 2025,40(1) - 15013.1～15013.7 - 共7页

摘要： mechanism and the severe self-heating* effect (SHE). These* | effect of self-heating and lattice stress has a | performance in different directions under self-heating | MPa. Self-heating* significantly affects stress* | In advanced FinFET process simulations, a

关键词： FinFET | Si_(1x)Ge_x | self-heating effect (SHE) | lattice stress | coupling effect

2. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET NSTL国家科技图书文献中心

Atabek E. Atamuratov | Bahor O. Jabbarova ... - 《Micro and Nanostructures》 - 2025,197(Jan.) - 208015.1～208015.11 - 共11页

摘要： the self-heating* effect the thermodynamic transport* | in the source and drain areas on the self-heating | -heating* effect, threshold voltage, and Ion/Ioff ratio* | effect in SOI FinFET is simulated at different doping | simulation. The results of simulation show that self

关键词： FinFET | Doping profile | Constant profile | Analytical profile | Lattice temperature

3. Correction of Self-Heating Effect of Standard Platinum Resistance Thermometer Based on Second-Order Heat Transfer Model in Strong Interference Environments NSTL国家科技图书文献中心

Liu, Jiawen | Xu, Peng ... - 《IEEE Transactions on Instrumentation and Measurement》 - 2025,74(Pt.1) - 2003013.1～2003013.13 - 共13页

摘要： obvious self-heating* effect, which affects the* | self-heating experiments. This calibration process | effective error compensation, particularly for self | -heating* effects, signifies its potential for broad* | This research introduces a novel second-order

关键词： Temperature measurement | Noise | Accuracy | Temperature sensors | Electrical resistance measurement | Filtering | Current measurement | Thermal noise | Sensors | Power supplies...

4. A modeling method for self-heating effect of FinFET with wide application range considering characteristic parameter NSTL国家科技图书文献中心

Wang, Yue | Liang, Huaguo ... - 《Physica Scripta》 - 2025,100(3) - 共14页

摘要： size, dealing with self-heating* effect (SHE) has* | 14 nm finned field-effect-transistor (FinFET) by | With the ongoing trend of reducing transistor | emerged as a crucial challenge in ensuring the | reliability of small-sized transistors. Accurately

关键词： FinFET | SHE temperature | characterization model | threshold voltage | gate source voltage

5. Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter NSTL国家科技图书文献中心

Kang Hee Lee | Mincheol Kim ... - 《IEEE Journal of the Electron Devices Society》 - 2025,13 - 41～48 - 共8页

摘要：We analyzed the impact of self-heating effect | (SHE) on fully depleted-silicon on insulator (FD-SOI | ) CMOS inverter at the 28 nm technology node | , considering both DC and AC operations. Specifically, we | focused on investigating the principles behind how SHE

关键词： MOSFET circuits | Inverters | Voltage | Logic gates | Thermal conductivity | Silicon | Thermal resistance | Thermal analysis | Performance evaluation | Degradation

6. Accurate operando measurement of AlGaN/GaN HEMTs channel temperature and optimization of thermal design NSTL国家科技图书文献中心

An, Ruihua | Zhao, Jinyan ... - 《Nanotechnology》 - 2025,36(13) - 共8页

摘要： channel temperature and self-heating* effect of the* | possibly solve the self-heating* problem, which hinders* | The accurate estimation of the temperature | distribution of the GaN based power devices and optimization | of the device structure is of great significance to

关键词： channel temperature | AlGaN/GaN HEMTs | thermal simulation | self-heating effect

7. Removing thermal error from DVC measurements with laboratory x-ray CT NSTL国家科技图书文献中心

Zhang, Xuanhao | Li, Xiaole ... - 《Measurement Science & Technology》 - 2025,36(6) - 065408.1～065408.12 - 共12页

摘要：-heating* effect of x-ray CT devices inevitably induces* | digital volume correlation (DVC). However, the self | The acquisition of high-fidelity volume images | using x-ray CT is crucial for achieving accurate | internal full-field deformation measurements using

关键词： digital volume correlation | self-heating effect | thermal error | CT reconstruction

8. Preparation and Performance Study of Intelligent Self-heating Electrode Materials for Low Temperature Li-Ion Batteries Based on PTC Effect NSTL国家科技图书文献中心

Zhao, Liping | Zhao, Ye ... - 《Russian Journal of Physical Chemistry》 - 2025,99(2) - 327～337 - 共11页

摘要： studied. (c) "Self* heating Battery" assembly and* | performance study: A self* heating Li-ion battery was* | An internal resistance heating* method was* | proposed to control the operating temperature of Li-ion | batteries to address rapid performance degradation under

关键词： Energy materials | Li-ion battery | Self-heating electrode | PTC effect | Composite material

9. Analytical multistage thermal resistance model for NSFET self-heating effects NSTL国家科技图书文献中心

Pan Zhao | Taoyu Zhou ... - 《Microelectronics journal》 - 2025,155(Jan.) - 106499.1～106499.6 - 共6页

摘要： scale down to 3 nm, the self-heating* effect in Gate* | analyze the self-heating* effect in nanosheet FETs. A new* | paper aims to investigate the self-heating* phenomenon* | mitigating self-heating* effects in nanosheet-based* | parameter extraction and calibration based on self-heating

关键词： BSIM-CMG model | Thermal resistance model (TRM) | Self-heating effect (SHE) | Stacked nanosheet FET | Thermal resistance (rth)

10. A physical model of a diamond vertical Schottky diode including incomplete ionization and thermal effects NSTL国家科技图书文献中心

Shang, Hong | Jiang, Yanfeng - 《Journal of Physics,D.Applied Physics》 - 2025,58(15) - 共11页

摘要： is also investigated. A self-heating* effect is* | effect of incomplete ionization of boron atoms on the | diamond materials is studied. The thermal effect* on both* | developed to describe the thermal effect* in a power device* | Diamond devices show particular supreme

摘要： mechanism and the severe self-heating* effect (SHE). These* | effect of self-heating and lattice stress has a | performance in different directions under self-heating | MPa. Self-heating* significantly affects stress* | In advanced FinFET process simulations, a

关键词： FinFET | Si_(1x)Ge_x | self-heating effect (SHE) | lattice stress | coupling effect

摘要： the self-heating* effect the thermodynamic transport* | in the source and drain areas on the self-heating | -heating* effect, threshold voltage, and Ion/Ioff ratio* | effect in SOI FinFET is simulated at different doping | simulation. The results of simulation show that self

关键词： FinFET | Doping profile | Constant profile | Analytical profile | Lattice temperature

摘要： obvious self-heating* effect, which affects the* | self-heating experiments. This calibration process | effective error compensation, particularly for self | -heating* effects, signifies its potential for broad* | This research introduces a novel second-order

关键词： Temperature measurement | Noise | Accuracy | Temperature sensors | Electrical resistance measurement | Filtering | Current measurement | Thermal noise | Sensors | Power supplies...

摘要： size, dealing with self-heating* effect (SHE) has* | 14 nm finned field-effect-transistor (FinFET) by | With the ongoing trend of reducing transistor | emerged as a crucial challenge in ensuring the | reliability of small-sized transistors. Accurately

关键词： FinFET | SHE temperature | characterization model | threshold voltage | gate source voltage

摘要：We analyzed the impact of self-heating effect | (SHE) on fully depleted-silicon on insulator (FD-SOI | ) CMOS inverter at the 28 nm technology node | , considering both DC and AC operations. Specifically, we | focused on investigating the principles behind how SHE

关键词： MOSFET circuits | Inverters | Voltage | Logic gates | Thermal conductivity | Silicon | Thermal resistance | Thermal analysis | Performance evaluation | Degradation

摘要： channel temperature and self-heating* effect of the* | possibly solve the self-heating* problem, which hinders* | The accurate estimation of the temperature | distribution of the GaN based power devices and optimization | of the device structure is of great significance to

关键词： channel temperature | AlGaN/GaN HEMTs | thermal simulation | self-heating effect

摘要：-heating* effect of x-ray CT devices inevitably induces* | digital volume correlation (DVC). However, the self | The acquisition of high-fidelity volume images | using x-ray CT is crucial for achieving accurate | internal full-field deformation measurements using

关键词： digital volume correlation | self-heating effect | thermal error | CT reconstruction

摘要： studied. (c) "Self* heating Battery" assembly and* | performance study: A self* heating Li-ion battery was* | An internal resistance heating* method was* | proposed to control the operating temperature of Li-ion | batteries to address rapid performance degradation under

关键词： Energy materials | Li-ion battery | Self-heating electrode | PTC effect | Composite material

摘要： scale down to 3 nm, the self-heating* effect in Gate* | analyze the self-heating* effect in nanosheet FETs. A new* | paper aims to investigate the self-heating* phenomenon* | mitigating self-heating* effects in nanosheet-based* | parameter extraction and calibration based on self-heating

关键词： BSIM-CMG model | Thermal resistance model (TRM) | Self-heating effect (SHE) | Stacked nanosheet FET | Thermal resistance (rth)

摘要： is also investigated. A self-heating* effect is* | effect of incomplete ionization of boron atoms on the | diamond materials is studied. The thermal effect* on both* | developed to describe the thermal effect* in a power device* | Diamond devices show particular supreme

关键词： boron doped diamond | incomplete ionization | mobility degradation | self-heating effect | temperature effect

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： mechanism and the severe self-heating effect (SHE). These | effect of self-heating and lattice stress has a | performance in different directions under self-heating | MPa. Self-heating significantly affects stress | In advanced FinFET process simulations, a

关键词： FinFET | Si_(1x)Ge_x | self-heating effect (SHE) | lattice stress | coupling effect

摘要： the self-heating effect the thermodynamic transport | in the source and drain areas on the self-heating | -heating effect, threshold voltage, and Ion/Ioff ratio | effect in SOI FinFET is simulated at different doping | simulation. The results of simulation show that self

关键词： FinFET | Doping profile | Constant profile | Analytical profile | Lattice temperature

摘要： obvious self-heating effect, which affects the | self-heating experiments. This calibration process | effective error compensation, particularly for self | -heating effects, signifies its potential for broad | This research introduces a novel second-order

关键词： Temperature measurement | Noise | Accuracy | Temperature sensors | Electrical resistance measurement | Filtering | Current measurement | Thermal noise | Sensors | Power supplies...

摘要： size, dealing with self-heating effect (SHE) has | 14 nm finned field-effect-transistor (FinFET) by | With the ongoing trend of reducing transistor | emerged as a crucial challenge in ensuring the | reliability of small-sized transistors. Accurately

关键词： FinFET | SHE temperature | characterization model | threshold voltage | gate source voltage

摘要：We analyzed the impact of self-heating effect | (SHE) on fully depleted-silicon on insulator (FD-SOI | ) CMOS inverter at the 28 nm technology node | , considering both DC and AC operations. Specifically, we | focused on investigating the principles behind how SHE

关键词： MOSFET circuits | Inverters | Voltage | Logic gates | Thermal conductivity | Silicon | Thermal resistance | Thermal analysis | Performance evaluation | Degradation

摘要： channel temperature and self-heating effect of the | possibly solve the self-heating problem, which hinders | The accurate estimation of the temperature | distribution of the GaN based power devices and optimization | of the device structure is of great significance to

关键词： channel temperature | AlGaN/GaN HEMTs | thermal simulation | self-heating effect

摘要：-heating effect of x-ray CT devices inevitably induces | digital volume correlation (DVC). However, the self | The acquisition of high-fidelity volume images | using x-ray CT is crucial for achieving accurate | internal full-field deformation measurements using

关键词： digital volume correlation | self-heating effect | thermal error | CT reconstruction

摘要： studied. (c) "Self heating Battery" assembly and | performance study: A self heating Li-ion battery was | An internal resistance heating method was | proposed to control the operating temperature of Li-ion | batteries to address rapid performance degradation under

关键词： Energy materials | Li-ion battery | Self-heating electrode | PTC effect | Composite material

摘要： scale down to 3 nm, the self-heating effect in Gate | analyze the self-heating effect in nanosheet FETs. A new | paper aims to investigate the self-heating phenomenon | mitigating self-heating effects in nanosheet-based | parameter extraction and calibration based on self-heating

关键词： BSIM-CMG model | Thermal resistance model (TRM) | Self-heating effect (SHE) | Stacked nanosheet FET | Thermal resistance (rth)

摘要： is also investigated. A self-heating effect is | effect of incomplete ionization of boron atoms on the | diamond materials is studied. The thermal effect on both | developed to describe the thermal effect in a power device | Diamond devices show particular supreme

关键词： boron doped diamond | incomplete ionization | mobility degradation | self-heating effect | temperature effect

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： mechanism and the severe self-heating* effect (SHE). These* | effect of self-heating and lattice stress has a | performance in different directions under self-heating | MPa. Self-heating* significantly affects stress* | In advanced FinFET process simulations, a

摘要： the self-heating* effect the thermodynamic transport* | in the source and drain areas on the self-heating | -heating* effect, threshold voltage, and Ion/Ioff ratio* | effect in SOI FinFET is simulated at different doping | simulation. The results of simulation show that self

摘要： obvious self-heating* effect, which affects the* | self-heating experiments. This calibration process | effective error compensation, particularly for self | -heating* effects, signifies its potential for broad* | This research introduces a novel second-order

摘要： size, dealing with self-heating* effect (SHE) has* | 14 nm finned field-effect-transistor (FinFET) by | With the ongoing trend of reducing transistor | emerged as a crucial challenge in ensuring the | reliability of small-sized transistors. Accurately

摘要： channel temperature and self-heating* effect of the* | possibly solve the self-heating* problem, which hinders* | The accurate estimation of the temperature | distribution of the GaN based power devices and optimization | of the device structure is of great significance to

摘要：-heating* effect of x-ray CT devices inevitably induces* | digital volume correlation (DVC). However, the self | The acquisition of high-fidelity volume images | using x-ray CT is crucial for achieving accurate | internal full-field deformation measurements using

摘要： studied. (c) "Self* heating Battery" assembly and* | performance study: A self* heating Li-ion battery was* | An internal resistance heating* method was* | proposed to control the operating temperature of Li-ion | batteries to address rapid performance degradation under

摘要： scale down to 3 nm, the self-heating* effect in Gate* | analyze the self-heating* effect in nanosheet FETs. A new* | paper aims to investigate the self-heating* phenomenon* | mitigating self-heating* effects in nanosheet-based* | parameter extraction and calibration based on self-heating

摘要： is also investigated. A self-heating* effect is* | effect of incomplete ionization of boron atoms on the | diamond materials is studied. The thermal effect* on both* | developed to describe the thermal effect* in a power device* | Diamond devices show particular supreme