NSTL国家科技图书文献中心

1. Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockley and Shockley–Noyce–Sah models NSTL国家科技图书文献中心

Fedor I Manyakhin | Dmitry O Varlamov ... - 《Semiconductor Science and Technology》 - 2025,40(1) - 15017.1～15017.11 - 共11页

摘要： non-ideality factor determined from experimental CVC | with a non-ideality* factor describing the* | -exponential factor* of the recombination component of the* | total current. The exponential factor* of the model* | The behavior of currentvoltage characteristics

关键词： pn junction | physical and mathematical models of currentvoltage characteristics (CVC) | distribution of the concentration of recombination centers | derivative of the CVC | non-ideality factor | recombination rate in the space charge region

2. Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing NSTL国家科技图书文献中心

Rahman, Md Hafijur | Warner, Luke ... - 《Physica Scripta》 - 2025,100(1) - 共10页

摘要： remarkable resilience, with an ideality* factor of 1.5* | non-thermal and can eliminate defects below 30 | (14) cm(-2). Radiation damage increased the ideality | factor from 1 to 2.33 in the pristine devices, while | Semiconductor devices contain defects and

关键词： proton radiation | zener diode | electron wind force | Raman spectroscopy | room-temperature annealing

3. Semi-conductive carbon from industrial tea waste biomass for a p-n junction NSTL国家科技图书文献中心

Akguel, Goekcen | Tomakin, Murat ... - 《Biomass Conversion and Biorefinery》 - 2025,15(4) - 5327～5337 - 共11页

摘要： a different reverse saturation current, ideality | factor, cut-in voltage and series resistance. The | amorphous and non-uniform nature of the carbonaceous | Some semiconducting carbonaceous material was | developed from industrial tea waste biomass by catalytic

关键词： Biomass | Tea waste | Semiconductive carbonaceous materials | p-n junction

4. Balancing ideality factor and reverse saturation current density to prepare high efficiency kesterite solar cells NSTL国家科技图书文献中心

Zhang J. | Sun Y.... - 《Renewable energy》 - 2025,239(Feb.) - 1.1～1.16 - 共6页

摘要： balancing ideality* factor (A) and reverse saturation* | J0) of non-radiative recombination. Moreover, we | © 2024 Elsevier LtdKesterite solar cells | garner significant interest due to their potential for | achieving high power conversion efficiency (PCE) at a

关键词： (A,J0) | CZTSSe solar cell | Efficiency | Non-radiative recombination

5. Self-Driven High-Performance Gate-Voltage-Tunable and Enhanced Performance Optoelectronic Device Based on FePS 3 /MoS 2 Heterojunctions NSTL国家科技图书文献中心

Wu, Xiaoxiang | Xiao, Cong ... - 《ACS applied materials & interfaces》 - 2025,17(12) - 18601～18608 - 共8页

摘要： an ideality* factor of 1.24 were observed* | achieved by eliminating non-heterojunction regions on the | The van der Waals heterojunctions are crucial | for the development of next-generation high | -performance optoelectronic devices due to their high-quality

关键词： two-dimensional materials | MoS2 | FePS3 | van der Waals heterojunction | optoelectronic device

6. Analyzing multicomponent permeation and coupling effects in pervaporation of Acetone-Butanol-Ethanol solutions using Maxwell-Stefan based modeling NSTL国家科技图书文献中心

Mutto, Abeer | Mahawer, Ketan ... - 《Journal of Membrane Science》 - 2025,713 - 共22页

摘要： addition to the non-ideality* arising from diagonal* | , a factor* critical for its widespread commercial* | correction factor* [Gamma] Gamma ] and correlation [B]- B* | The state-of-the-art research in pervaporation | lacks a comprehensive understanding of the selective

关键词： Membrane pervaporation | Acetone-butanol-ethanol (ABE) fermentation | Maxwell-stefan diffusivity | Thermodynamic correction factor | UNIQUAC

7. Electrical characterization of Al/Sn02/PbO/Si double layer MOS under the moderate radiation effect NSTL国家科技图书文献中心

Defne Akay | Sevim Alkan ... - 《Radiation Physics and Chemistry》 - 2024,216 - 111392,2-7～ - 共7页 - 被引量：2

摘要： current.The non-ideality* factor n increases with the 30 kGy* | ideality factor,series resistance,saturation current | the Cheung method,while the ideality factor* was* | ideality factor was found to be 6.337 before irradiation | The metal-oxide semiconductor-based structures

关键词： Characteristic | Metal oxide semiconductor | Radiation | TE theory

8. Extraction of Ideality Factor for Single Junction c-GaAs Solar Cell for a Band of Wavelengths Ranging from 300 nm to 900 nm at AM1.5G Irradiance Using TCAD NSTL国家科技图书文献中心

Vinay Krishna Andra | Mahmudur Rahman - 《2024 IEEE 52nd Photovoltaic Specialist Conference》 - IEEE Photovoltaic Specialist Conference - 2024, - 1462～1464 - 共3页

摘要：Ideality factor is one of the key performance | Resistance, etc. This paper investigates the Ideality | factor for bands of wavelengths such as 300 - 400 nm | nm, and 800 - 900 nm. For this study, the Ideality | factor is extracted using Single Diode PV model as well

关键词： Resistance | Photovoltaic systems | Temperature | Photovoltaic cells | Distance measurement | Junctions | Curve fitting

9. Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates NSTL国家科技图书文献中心

Toprak, Basak caglay... | Efkere, Halil Ibrahi...... - 《Journal of Materials Science. Materials in Electronics》 - 2024,35(20) - ARTN 1389～ - 共10页 - 被引量：2

摘要：. Additionally, electric parameters like ideality factor | state. The ideality* factor was found to be greater* | of the device exhibits non-ideal attitude. The | Magnesium Oxide (MgO) thin film structures | were deposited on glass and n-Si substrates by means

关键词： SERIES RESISTANCE | INTERFACE STATES | SCHOTTKY DIODES | I-V | ABSORPTION

10. Investigation of cryogenic current-voltage anomalies in SiGe HBTs: Role of base-emitter junction inhomogeneities NSTL国家科技图书文献中心

Naik, Nachiket R. | Gabritchidze, Bekari ... - 《Journal of Applied Physics》 - 2024,135(16) - ARTN 164501～ - 共7页

摘要： the collector current ideality* factor and built-in* | ideality factor and the relation between the built-in | contributes to the non-ideal current in highly scaled | mechanism may also contribute. Although similar non-ideal | junction potential may contribute to the cryogenic non

摘要： non-ideality factor determined from experimental CVC | with a non-ideality* factor describing the* | -exponential factor* of the recombination component of the* | total current. The exponential factor* of the model* | The behavior of currentvoltage characteristics

关键词： pn junction | physical and mathematical models of currentvoltage characteristics (CVC) | distribution of the concentration of recombination centers | derivative of the CVC | non-ideality factor | recombination rate in the space charge region

摘要： remarkable resilience, with an ideality* factor of 1.5* | non-thermal and can eliminate defects below 30 | (14) cm(-2). Radiation damage increased the ideality | factor from 1 to 2.33 in the pristine devices, while | Semiconductor devices contain defects and

关键词： proton radiation | zener diode | electron wind force | Raman spectroscopy | room-temperature annealing

摘要： a different reverse saturation current, ideality | factor, cut-in voltage and series resistance. The | amorphous and non-uniform nature of the carbonaceous | Some semiconducting carbonaceous material was | developed from industrial tea waste biomass by catalytic

关键词： Biomass | Tea waste | Semiconductive carbonaceous materials | p-n junction

摘要： balancing ideality* factor (A) and reverse saturation* | J0) of non-radiative recombination. Moreover, we | © 2024 Elsevier LtdKesterite solar cells | garner significant interest due to their potential for | achieving high power conversion efficiency (PCE) at a

关键词： (A,J0) | CZTSSe solar cell | Efficiency | Non-radiative recombination

摘要： an ideality* factor of 1.24 were observed* | achieved by eliminating non-heterojunction regions on the | The van der Waals heterojunctions are crucial | for the development of next-generation high | -performance optoelectronic devices due to their high-quality

关键词： two-dimensional materials | MoS2 | FePS3 | van der Waals heterojunction | optoelectronic device

摘要： addition to the non-ideality* arising from diagonal* | , a factor* critical for its widespread commercial* | correction factor* [Gamma] Gamma ] and correlation [B]- B* | The state-of-the-art research in pervaporation | lacks a comprehensive understanding of the selective

关键词： Membrane pervaporation | Acetone-butanol-ethanol (ABE) fermentation | Maxwell-stefan diffusivity | Thermodynamic correction factor | UNIQUAC

摘要： current.The non-ideality* factor n increases with the 30 kGy* | ideality factor,series resistance,saturation current | the Cheung method,while the ideality factor* was* | ideality factor was found to be 6.337 before irradiation | The metal-oxide semiconductor-based structures

关键词： Characteristic | Metal oxide semiconductor | Radiation | TE theory

摘要：Ideality factor is one of the key performance | Resistance, etc. This paper investigates the Ideality | factor for bands of wavelengths such as 300 - 400 nm | nm, and 800 - 900 nm. For this study, the Ideality | factor is extracted using Single Diode PV model as well

关键词： Resistance | Photovoltaic systems | Temperature | Photovoltaic cells | Distance measurement | Junctions | Curve fitting

摘要：. Additionally, electric parameters like ideality factor | state. The ideality* factor was found to be greater* | of the device exhibits non-ideal attitude. The | Magnesium Oxide (MgO) thin film structures | were deposited on glass and n-Si substrates by means

关键词： SERIES RESISTANCE | INTERFACE STATES | SCHOTTKY DIODES | I-V | ABSORPTION

摘要： the collector current ideality* factor and built-in* | ideality factor and the relation between the built-in | contributes to the non-ideal current in highly scaled | mechanism may also contribute. Although similar non-ideal | junction potential may contribute to the cryogenic non

关键词： HETEROJUNCTION BIPOLAR-TRANSISTORS | SCHOTTKY-BARRIER HEIGHT | EPITAXIAL NISI2 | INTERFACES | TRANSPORT

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： non-ideality factor determined from experimental CVC | with a non-ideality factor describing the | -exponential factor of the recombination component of the | total current. The exponential factor of the model | The behavior of currentvoltage characteristics

关键词： pn junction | physical and mathematical models of currentvoltage characteristics (CVC) | distribution of the concentration of recombination centers | derivative of the CVC | non-ideality factor | recombination rate in the space charge region

摘要： remarkable resilience, with an ideality factor of 1.5 | non-thermal and can eliminate defects below 30 | (14) cm(-2). Radiation damage increased the ideality | factor from 1 to 2.33 in the pristine devices, while | Semiconductor devices contain defects and

关键词： proton radiation | zener diode | electron wind force | Raman spectroscopy | room-temperature annealing

摘要： a different reverse saturation current, ideality | factor, cut-in voltage and series resistance. The | amorphous and non-uniform nature of the carbonaceous | Some semiconducting carbonaceous material was | developed from industrial tea waste biomass by catalytic

关键词： Biomass | Tea waste | Semiconductive carbonaceous materials | p-n junction

摘要： balancing ideality factor (A) and reverse saturation | J0) of non-radiative recombination. Moreover, we | © 2024 Elsevier LtdKesterite solar cells | garner significant interest due to their potential for | achieving high power conversion efficiency (PCE) at a

关键词： (A,J0) | CZTSSe solar cell | Efficiency | Non-radiative recombination

摘要： an ideality factor of 1.24 were observed | achieved by eliminating non-heterojunction regions on the | The van der Waals heterojunctions are crucial | for the development of next-generation high | -performance optoelectronic devices due to their high-quality

关键词： two-dimensional materials | MoS2 | FePS3 | van der Waals heterojunction | optoelectronic device

摘要： addition to the non-ideality arising from diagonal | , a factor critical for its widespread commercial | correction factor [Gamma] Gamma ] and correlation [B]- B | The state-of-the-art research in pervaporation | lacks a comprehensive understanding of the selective

关键词： Membrane pervaporation | Acetone-butanol-ethanol (ABE) fermentation | Maxwell-stefan diffusivity | Thermodynamic correction factor | UNIQUAC

摘要： current.The non-ideality factor n increases with the 30 kGy | ideality factor,series resistance,saturation current | the Cheung method,while the ideality factor was | ideality factor was found to be 6.337 before irradiation | The metal-oxide semiconductor-based structures

关键词： Characteristic | Metal oxide semiconductor | Radiation | TE theory

摘要：Ideality factor is one of the key performance | Resistance, etc. This paper investigates the Ideality | factor for bands of wavelengths such as 300 - 400 nm | nm, and 800 - 900 nm. For this study, the Ideality | factor is extracted using Single Diode PV model as well

关键词： Resistance | Photovoltaic systems | Temperature | Photovoltaic cells | Distance measurement | Junctions | Curve fitting

摘要：. Additionally, electric parameters like ideality factor | state. The ideality factor was found to be greater | of the device exhibits non-ideal attitude. The | Magnesium Oxide (MgO) thin film structures | were deposited on glass and n-Si substrates by means

关键词： SERIES RESISTANCE | INTERFACE STATES | SCHOTTKY DIODES | I-V | ABSORPTION

摘要： the collector current ideality factor and built-in | ideality factor and the relation between the built-in | contributes to the non-ideal current in highly scaled | mechanism may also contribute. Although similar non-ideal | junction potential may contribute to the cryogenic non

关键词： HETEROJUNCTION BIPOLAR-TRANSISTORS | SCHOTTKY-BARRIER HEIGHT | EPITAXIAL NISI2 | INTERFACES | TRANSPORT

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： non-ideality factor determined from experimental CVC | with a non-ideality* factor describing the* | -exponential factor* of the recombination component of the* | total current. The exponential factor* of the model* | The behavior of currentvoltage characteristics

摘要： remarkable resilience, with an ideality* factor of 1.5* | non-thermal and can eliminate defects below 30 | (14) cm(-2). Radiation damage increased the ideality | factor from 1 to 2.33 in the pristine devices, while | Semiconductor devices contain defects and

摘要： balancing ideality* factor (A) and reverse saturation* | J0) of non-radiative recombination. Moreover, we | © 2024 Elsevier LtdKesterite solar cells | garner significant interest due to their potential for | achieving high power conversion efficiency (PCE) at a

摘要： an ideality* factor of 1.24 were observed* | achieved by eliminating non-heterojunction regions on the | The van der Waals heterojunctions are crucial | for the development of next-generation high | -performance optoelectronic devices due to their high-quality

摘要： addition to the non-ideality* arising from diagonal* | , a factor* critical for its widespread commercial* | correction factor* [Gamma] Gamma ] and correlation [B]- B* | The state-of-the-art research in pervaporation | lacks a comprehensive understanding of the selective

摘要： current.The non-ideality* factor n increases with the 30 kGy* | ideality factor,series resistance,saturation current | the Cheung method,while the ideality factor* was* | ideality factor was found to be 6.337 before irradiation | The metal-oxide semiconductor-based structures

摘要：. Additionally, electric parameters like ideality factor | state. The ideality* factor was found to be greater* | of the device exhibits non-ideal attitude. The | Magnesium Oxide (MgO) thin film structures | were deposited on glass and n-Si substrates by means

摘要： the collector current ideality* factor and built-in* | ideality factor and the relation between the built-in | contributes to the non-ideal current in highly scaled | mechanism may also contribute. Although similar non-ideal | junction potential may contribute to the cryogenic non