NSTL国家科技图书文献中心

1. Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling test NSTL国家科技图书文献中心

Abbaszada, Mohammad ... | Gajanur, Nanditha ... - 《Microelectronics and reliability》 - 2025,165(Feb.) - 1.1～1.11 - 共11页

摘要： evaluation of the long-term performance of the SiC MOSFET | Silicon carbide (SiC) MOSFETs are known for | SiC MOSFETs under real-world operating conditions | degradation mechanisms and reliability of SiC* MOSFETs. The* | ensure reliable lifetime predictions for SiC* MOSFETs in*

关键词： SiC MOSFET | Reliability assessment | Lifetime evaluation | Power cycling tests | Inverter-like accelerated test

2. A Study on Short Circuit Characteristics of 4H-SiC MOSFET Coupled With Electron Irradiation NSTL国家科技图书文献中心

Yan Chen | Yun Bai ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 323～330 - 共8页

摘要： carbide (SiC) MOSFET* are studied. The SC influence* | irradiation is further studied. The 4H-SiC MOSFET and 4H-SiC | in static parameters of 4H-SiC* MOSFET are analyzed* | , and the SC characteristics of 4H-SiC* MOSFET under* | irradiation, the SC peak current of 4H-SiC* MOSFET increases*

关键词： Radiation effects | Electrons | MOSFET | Logic gates | Annealing | Silicon carbide | Tunneling | Charge carrier lifetime | Couplings | Threshold voltage

3. A Temperature-Dependent Analytical Transient Model of SiC MOSFET in Half-Bridge Circuits NSTL国家科技图书文献中心

Peng Xue | Pooya Davari - 《IEEE Transactions on Power Electronics》 - 2025,40(1 Pt.1) - 892～905 - 共14页

摘要：. The switching transient of the SiC* mosfet is divided* | , excess charge extraction in the N-base of SiC mosfet | high-side mosfet on the switching behavior of SiC | switching behavior, an analytical model of SiC* mosfet is* | transient model of silicon carbide (SiC) metal-oxide

关键词： MOSFET | Silicon carbide | Analytical models | Numerical models | Switches | Semiconductor device modeling | Logic gates | Transient analysis | Junctions | Substrates

4. A Brief Review of SiC MOSFET Transient Analytical Modeling Methods: Principles, Current Status, and Parameters Modeling NSTL国家科技图书文献中心

Lina Wang | Zezhuo Yuan ... - 《IEEE Transactions on Power Electronics》 - 2025,40(4 Pt.1) - 5177～5189 - 共13页 - 被引量：1

摘要： the analytical modeling of SiC* mosfet switching* | parameters for SiC* mosfet switching transient modeling. In* | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal | methods for analyzing the switching transient of SiC

关键词： Silicon carbide | Transient analysis | MOSFET | Analytical models | Switches | Mathematical models | Integrated circuit modeling

5. An Online Monitoring Method of Bond Wire Lift-off Unevenness in Multichip SiC MOSFET Power Modules NSTL国家科技图书文献中心

Ziyang Zhang | Lin Liang ... - 《IEEE Transactions on Power Electronics》 - 2025,40(4 Pt.2) - 6033～6043 - 共11页

摘要： degradation of SiC* mosfet.* | multichip silicon carbide (SiC) metal oxide semiconductor | field effect transistor (mosfet) power modules. The | Monitoring bond wire lift-off unevenness is | the basis for high-reliability operation of

关键词： Wire | Monitoring | Silicon carbide | MOSFET | Voltage | Logic gates | Degradation | Junctions | Kelvin | Temperature sensors

6. An Accurate SiC MOSFET Transient Modeling Method for the FPGA-Based Real-Time Simulation of Power Electronic Converters NSTL国家科技图书文献中心

Shinan Wang | Xizheng Guo ... - 《IEEE Open Journal of Power Electronics》 - 2025,6 - 344～353 - 共10页

摘要： the SiC* MOSFET through look-up tables (LUTs). In* | This article proposes a silicon carbide (SiC | ) MOSFET* transient model on the field programmable gate* | . Compared with the existing research that simplifies SiC | MOSFET model in the RTS implementation process, the

关键词： Silicon carbide | MOSFET | Semiconductor device modeling | Integrated circuit modeling | Mathematical models | Transient analysis | Logic gates | Switches | Computational modeling | Accuracy

7. A novel 4H-SiC power MOSFET with source-side poly-Si/SiC heterojunctions for single-event effects hardening NSTL国家科技图书文献中心

Qisheng Yu | Wensuo Chen ... - 《Micro and Nanostructures》 - 2025,198(Feb.) - 208064.1～208064.10 - 共10页

摘要：-A novel SiC* power MOSFET structure with* | of the original N + SiC* source region MOSFET. In* | Source-side Poly-Si/SiC* Heterojunctions (SH-MOS) is* | , The P + Poly-Si and N SiC* form a p/n type Poly-Si* | /SiC* heterojunction diode (HJD), effectively*

关键词： Silicon carbide (SiC) MOSFET | Polycrystalline silicon (Poly-Si) | Heterojunction | Single-event burnout (SEB) single-event gate rupture (SEGR)

8. SiC MOSFET Turn-Off Measurement With Air-Core Inductor Design and RC Snubber Correction NSTL国家科技图书文献中心

Zhang, Li | Zhao, Zhibin ... - 《IEEE Transactions on Instrumentation and Measurement》 - 2025,74(Pt.1) - 1005013.1～1005013.13 - 共13页

摘要：The dynamic turn-off measurement of SiC | MOSFETs is highly sensitive to parasitic parameters in | the measurement circuit due to their extremely high | di/dt and dv/dt. In particular, the parasitic | capacitance in the load inductor and the parasitic

关键词： MOSFET | Current measurement | Silicon carbide | Inductance | Inductors | Semiconductor device measurement | Parasitic capacitance | Voltage measurement | Power measurement | Mathematical models...

9. A Multilevel Self-Driving Gate Driver of SiC MOSFET for Crosstalk Suppression Considering Common-Source Inductance NSTL国家科技图书文献中心

Kaiyuan Hu | Ming Yang ... - 《IEEE Transactions on Power Electronics》 - 2025,40(1 Pt.1) - 906～919 - 共14页

摘要： devices, silicon carbide mosfet* exhibits superior* | Compared with conventional silicon-based | characteristics. However, the high dv/dt caused by high | switching speed makes it more susceptible to crosstalk | spikes caused by Miller capacitance and common-source

关键词： Crosstalk | Logic gates | Voltage control | Threshold voltage | Inductance | MOSFET | Gate drivers

10. SiC-MOSFET-Based High Voltage Pulse Generator for Testing Motor Insulation Used in EVs NSTL国家科技图书文献中心

Ali Kholgh Khiz | Shesha H. Jayaram - 《IEEE transactions on transportation electrification》 - 2025,11(1) - 1026～1034 - 共9页

摘要： incorporates a converter based on SiC-MOSFETs, offering | The use of wide bandgap (WBG) power | semiconductor devices in the transportation electrification | area is gaining increased interest due to high power | density, low power losses, high switching frequencies

摘要： evaluation of the long-term performance of the SiC MOSFET | Silicon carbide (SiC) MOSFETs are known for | SiC MOSFETs under real-world operating conditions | degradation mechanisms and reliability of SiC* MOSFETs. The* | ensure reliable lifetime predictions for SiC* MOSFETs in*

关键词： SiC MOSFET | Reliability assessment | Lifetime evaluation | Power cycling tests | Inverter-like accelerated test

摘要： carbide (SiC) MOSFET* are studied. The SC influence* | irradiation is further studied. The 4H-SiC MOSFET and 4H-SiC | in static parameters of 4H-SiC* MOSFET are analyzed* | , and the SC characteristics of 4H-SiC* MOSFET under* | irradiation, the SC peak current of 4H-SiC* MOSFET increases*

关键词： Radiation effects | Electrons | MOSFET | Logic gates | Annealing | Silicon carbide | Tunneling | Charge carrier lifetime | Couplings | Threshold voltage

摘要：. The switching transient of the SiC* mosfet is divided* | , excess charge extraction in the N-base of SiC mosfet | high-side mosfet on the switching behavior of SiC | switching behavior, an analytical model of SiC* mosfet is* | transient model of silicon carbide (SiC) metal-oxide

关键词： MOSFET | Silicon carbide | Analytical models | Numerical models | Switches | Semiconductor device modeling | Logic gates | Transient analysis | Junctions | Substrates

摘要： the analytical modeling of SiC* mosfet switching* | parameters for SiC* mosfet switching transient modeling. In* | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal | methods for analyzing the switching transient of SiC

关键词： Silicon carbide | Transient analysis | MOSFET | Analytical models | Switches | Mathematical models | Integrated circuit modeling

摘要： degradation of SiC* mosfet.* | multichip silicon carbide (SiC) metal oxide semiconductor | field effect transistor (mosfet) power modules. The | Monitoring bond wire lift-off unevenness is | the basis for high-reliability operation of

关键词： Wire | Monitoring | Silicon carbide | MOSFET | Voltage | Logic gates | Degradation | Junctions | Kelvin | Temperature sensors

摘要： the SiC* MOSFET through look-up tables (LUTs). In* | This article proposes a silicon carbide (SiC | ) MOSFET* transient model on the field programmable gate* | . Compared with the existing research that simplifies SiC | MOSFET model in the RTS implementation process, the

关键词： Silicon carbide | MOSFET | Semiconductor device modeling | Integrated circuit modeling | Mathematical models | Transient analysis | Logic gates | Switches | Computational modeling | Accuracy

摘要：-A novel SiC* power MOSFET structure with* | of the original N + SiC* source region MOSFET. In* | Source-side Poly-Si/SiC* Heterojunctions (SH-MOS) is* | , The P + Poly-Si and N SiC* form a p/n type Poly-Si* | /SiC* heterojunction diode (HJD), effectively*

关键词： Silicon carbide (SiC) MOSFET | Polycrystalline silicon (Poly-Si) | Heterojunction | Single-event burnout (SEB) single-event gate rupture (SEGR)

摘要：The dynamic turn-off measurement of SiC | MOSFETs is highly sensitive to parasitic parameters in | the measurement circuit due to their extremely high | di/dt and dv/dt. In particular, the parasitic | capacitance in the load inductor and the parasitic

关键词： MOSFET | Current measurement | Silicon carbide | Inductance | Inductors | Semiconductor device measurement | Parasitic capacitance | Voltage measurement | Power measurement | Mathematical models...

摘要： devices, silicon carbide mosfet* exhibits superior* | Compared with conventional silicon-based | characteristics. However, the high dv/dt caused by high | switching speed makes it more susceptible to crosstalk | spikes caused by Miller capacitance and common-source

关键词： Crosstalk | Logic gates | Voltage control | Threshold voltage | Inductance | MOSFET | Gate drivers

摘要： incorporates a converter based on SiC-MOSFETs, offering | The use of wide bandgap (WBG) power | semiconductor devices in the transportation electrification | area is gaining increased interest due to high power | density, low power losses, high switching frequencies

关键词： Switches | Motors | Insulation | Switching circuits | Pulse generation | Generators | Capacitors

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： evaluation of the long-term performance of the SiC MOSFET | Silicon carbide (SiC) MOSFETs are known for | SiC MOSFETs under real-world operating conditions | degradation mechanisms and reliability of SiC MOSFETs. The | ensure reliable lifetime predictions for SiC MOSFETs in

关键词： SiC MOSFET | Reliability assessment | Lifetime evaluation | Power cycling tests | Inverter-like accelerated test

摘要： carbide (SiC) MOSFET are studied. The SC influence | irradiation is further studied. The 4H-SiC MOSFET and 4H-SiC | in static parameters of 4H-SiC MOSFET are analyzed | , and the SC characteristics of 4H-SiC MOSFET under | irradiation, the SC peak current of 4H-SiC MOSFET increases

关键词： Radiation effects | Electrons | MOSFET | Logic gates | Annealing | Silicon carbide | Tunneling | Charge carrier lifetime | Couplings | Threshold voltage

摘要：. The switching transient of the SiC mosfet is divided | , excess charge extraction in the N-base of SiC mosfet | high-side mosfet on the switching behavior of SiC | switching behavior, an analytical model of SiC mosfet is | transient model of silicon carbide (SiC) metal-oxide

关键词： MOSFET | Silicon carbide | Analytical models | Numerical models | Switches | Semiconductor device modeling | Logic gates | Transient analysis | Junctions | Substrates

摘要： the analytical modeling of SiC mosfet switching | parameters for SiC mosfet switching transient modeling. In | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal | methods for analyzing the switching transient of SiC

关键词： Silicon carbide | Transient analysis | MOSFET | Analytical models | Switches | Mathematical models | Integrated circuit modeling

摘要： degradation of SiC mosfet. | multichip silicon carbide (SiC) metal oxide semiconductor | field effect transistor (mosfet) power modules. The | Monitoring bond wire lift-off unevenness is | the basis for high-reliability operation of

关键词： Wire | Monitoring | Silicon carbide | MOSFET | Voltage | Logic gates | Degradation | Junctions | Kelvin | Temperature sensors

摘要： the SiC MOSFET through look-up tables (LUTs). In | This article proposes a silicon carbide (SiC | ) MOSFET transient model on the field programmable gate | . Compared with the existing research that simplifies SiC | MOSFET model in the RTS implementation process, the

关键词： Silicon carbide | MOSFET | Semiconductor device modeling | Integrated circuit modeling | Mathematical models | Transient analysis | Logic gates | Switches | Computational modeling | Accuracy

摘要：-A novel SiC power MOSFET structure with | of the original N + SiC source region MOSFET. In | Source-side Poly-Si/SiC Heterojunctions (SH-MOS) is | , The P + Poly-Si and N SiC form a p/n type Poly-Si | /SiC heterojunction diode (HJD), effectively

关键词： Silicon carbide (SiC) MOSFET | Polycrystalline silicon (Poly-Si) | Heterojunction | Single-event burnout (SEB) single-event gate rupture (SEGR)

摘要：The dynamic turn-off measurement of SiC | MOSFETs is highly sensitive to parasitic parameters in | the measurement circuit due to their extremely high | di/dt and dv/dt. In particular, the parasitic | capacitance in the load inductor and the parasitic

关键词： MOSFET | Current measurement | Silicon carbide | Inductance | Inductors | Semiconductor device measurement | Parasitic capacitance | Voltage measurement | Power measurement | Mathematical models...

摘要： devices, silicon carbide mosfet exhibits superior | Compared with conventional silicon-based | characteristics. However, the high dv/dt caused by high | switching speed makes it more susceptible to crosstalk | spikes caused by Miller capacitance and common-source

关键词： Crosstalk | Logic gates | Voltage control | Threshold voltage | Inductance | MOSFET | Gate drivers

摘要： incorporates a converter based on SiC-MOSFETs, offering | The use of wide bandgap (WBG) power | semiconductor devices in the transportation electrification | area is gaining increased interest due to high power | density, low power losses, high switching frequencies

关键词： Switches | Motors | Insulation | Switching circuits | Pulse generation | Generators | Capacitors

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： evaluation of the long-term performance of the SiC MOSFET | Silicon carbide (SiC) MOSFETs are known for | SiC MOSFETs under real-world operating conditions | degradation mechanisms and reliability of SiC* MOSFETs. The* | ensure reliable lifetime predictions for SiC* MOSFETs in*

摘要：. The switching transient of the SiC* mosfet is divided* | , excess charge extraction in the N-base of SiC mosfet | high-side mosfet on the switching behavior of SiC | switching behavior, an analytical model of SiC* mosfet is* | transient model of silicon carbide (SiC) metal-oxide

摘要： the analytical modeling of SiC* mosfet switching* | parameters for SiC* mosfet switching transient modeling. In* | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal | methods for analyzing the switching transient of SiC

摘要： degradation of SiC* mosfet.* | multichip silicon carbide (SiC) metal oxide semiconductor | field effect transistor (mosfet) power modules. The | Monitoring bond wire lift-off unevenness is | the basis for high-reliability operation of

摘要： the SiC* MOSFET through look-up tables (LUTs). In* | This article proposes a silicon carbide (SiC | ) MOSFET* transient model on the field programmable gate* | . Compared with the existing research that simplifies SiC | MOSFET model in the RTS implementation process, the

摘要：-A novel SiC* power MOSFET structure with* | of the original N + SiC* source region MOSFET. In* | Source-side Poly-Si/SiC* Heterojunctions (SH-MOS) is* | , The P + Poly-Si and N SiC* form a p/n type Poly-Si* | /SiC* heterojunction diode (HJD), effectively*

摘要： devices, silicon carbide mosfet* exhibits superior* | Compared with conventional silicon-based | characteristics. However, the high dv/dt caused by high | switching speed makes it more susceptible to crosstalk | spikes caused by Miller capacitance and common-source