NSTL国家科技图书文献中心

1. Spacer Engineered Halo-Doped Nanowire MOSFET for Digital Applications NSTL国家科技图书文献中心

Kumar, P. Kiran | Balaji, B.... - 《Journal of Electronic Materials》 - 2025,54(1) - 758～772 - 共15页

摘要：-doped nanowire MOSFET. The utilization of high-k | -side asymmetrical spacer halo-doped nanowire MOSFET | This paper presents a novel design and | analysis of a low-k source-side asymmetrical spacer halo | spacer materials in MOSFETs enhances electrostatic

关键词： Nanowire MOSFET | spacer | underlap | fringing fields | halo doping

2. Analysis on thermal simulation of MOSFET based on voids under working conditions NSTL国家科技图书文献中心

Lyu, Shiming | Yang, Xiangyu ... - 《Microelectronics and reliability》 - 2025,165(Feb.) - 1.1～1.8 - 共8页

摘要：In automotive electronic water pumps, MOSFET | engine will cause the electronic water pump MOSFET* to* | overheating failure of MOSFET, a thermal simulation model of | printed circuit board MOSFET* for automotive electronic* | software. The temperature rise characteristics of MOSFET

关键词： Electronic water pump | FLUENT | MOSFET | Void rates | Thermal resistance | TEMPERATURE

3. SiC MOSFET study on the static characteristics of models affected by temperature NSTL国家科技图书文献中心

Fan Xu - 《Fourth International Conference on Advanced Manufacturing Technology and Electronic Information (AMTEI 2024)》 - International Conference on Advanced Manufacturing Technology and Electronic Information - 2025, - 135151E.1～135151E.6 - 共6页

摘要： introduces the basic working principle of SiC MOSFET* and* | control source of SiC MOSFET* model under different* | characteristics of SiC MOSFET* is significantly temperature* | With the continuous development of science and | technology, the performance requirements of power

关键词： SiC MOSFET | Static characteristic | PSpice model | Temperature

4. A Brief Review of SiC MOSFET Transient Analytical Modeling Methods: Principles, Current Status, and Parameters Modeling NSTL国家科技图书文献中心

Lina Wang | Zezhuo Yuan ... - 《IEEE Transactions on Power Electronics》 - 2025,40(4 Pt.1) - 5177～5189 - 共13页 - 被引量：1

摘要：-oxide-semiconductor* field-effect transistors (mosfets* | the analytical modeling of SiC mosfet* switching* | parameters for SiC mosfet* switching transient modeling. In* | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal

关键词： Silicon carbide | Transient analysis | MOSFET | Analytical models | Switches | Mathematical models | Integrated circuit modeling

5. Development and investigation of DMDG-MOSFET biosensor for charged biomolecule detection NSTL国家科技图书文献中心

Das, Satish Kumar | Biswal, Sudhansu M.... - 《Physica Scripta》 - 2025,100(2) - 共16页

摘要： Gate (DMDG) MOSFET* biosensor, specifically focusing* | precisely compared to conventional MOSFET-based biosensors | findings suggest that the proposed gate stack DMDG-MOSFET | The paper explores the analog and sensitivity | parameter of a n-channel gate stack Dual Material Double

关键词： DMDG MOSFET | biosensor | charged biomolecule | sensitivity

6. One-Step Method of Dynamic Capacitances Extraction From a SiC Power MOSFET in a Half-Bridge Package for EMI Analysis NSTL国家科技图书文献中心

Jaewon Rhee | Sanguk Lee ... - 《IEEE Transactions on Power Electronics》 - 2025,40(1 Pt.1) - 969～983 - 共15页

摘要：-semiconductor* field-effect transistors (mosfets) are essential* | dynamic capacitance characteristics of metal-oxide | compatibility. A mosfet* is a semiconductor widely used in* | characteristics of a mosfet* are closely related to the switching* | accurately known. The capacitance of a mosfet* changes*

关键词： MOSFET | Capacitance | Electromagnetic interference | Voltage measurement | Impedance measurement | Switches | Impedance | Capacitance measurement | Vehicle dynamics | Electromagnetic compatibility

7. A Temperature-Dependent Analytical Transient Model of SiC MOSFET in Half-Bridge Circuits NSTL国家科技图书文献中心

Peng Xue | Pooya Davari - 《IEEE Transactions on Power Electronics》 - 2025,40(1 Pt.1) - 892～905 - 共14页

摘要：-semiconductor* field-effect transistor (mosfet) is proposed* | . The switching transient of the SiC mosfet* is divided* | the mosfet* and its body diode are analyzed and the* | , excess charge extraction in the N-base of SiC mosfet | low-side mosfet* and junction temperature $T_{J2}$ of*

关键词： MOSFET | Silicon carbide | Analytical models | Numerical models | Switches | Semiconductor device modeling | Logic gates | Transient analysis | Junctions | Substrates

8. A Study on Short Circuit Characteristics of 4H-SiC MOSFET Coupled With Electron Irradiation NSTL国家科技图书文献中心

Yan Chen | Yun Bai ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 323～330 - 共8页

摘要： carbide (SiC) MOSFET* are studied. The SC influence* | irradiation is further studied. The 4H-SiC MOSFET* and 4H-SiC* | in static parameters of 4H-SiC MOSFET* are analyzed* | , and the SC characteristics of 4H-SiC MOSFET* under* | irradiation, the SC peak current of 4H-SiC MOSFET* increases*

关键词： Radiation effects | Electrons | MOSFET | Logic gates | Annealing | Silicon carbide | Tunneling | Charge carrier lifetime | Couplings | Threshold voltage

9. Analytical modeling of cylindrical Silicon-on-Insulator Schottky Barrier MOSFET and impact of insulator pillar radius on analog/RF and linearity parameters for low power circuit application NSTL国家科技图书文献中心

Jitender Kumar | Amit Saxena ... - 《Microelectronics journal》 - 2025,156(Feb.) - 106505.1～106505.10 - 共10页

摘要： (MOSFET) due to its enhanced analog/RF parameters, high | MOSFET, specifically focusing on how to calculate | ) Metal-Oxide-Semiconductor Field-Effect Transistor | In the current scenario of semiconductor | technologies, the researchers are investigating the

关键词： Cylindrical MOSFET | SOISB MOSFET | Analog/RF parameters | Silvco TCAD and multi-gate MOSFET

10. P-Type Ternary Logic MOSFET With Tunable Middle State Using Bidirectional Threshold Switching NSTL国家科技图书文献中心

Jeong-A Han | Jung-Woo Lee ... - 《IEEE Electron Device Letters》 - 2025,46(1) - 16～19 - 共4页

摘要：A p-type ternary logic MOSFET* (P-TMOS), which* | -type ternary logic MOSFET* (N-TMOS) but has been* | serves as the counterpart to a previously reported n | missing for the construction of a complementary standard | ternary inverter, is demonstrated. The P-TMOS consists

关键词： Multivalued logic | MOSFET | Transistors | Switches | Resistance | Logic gates | Junctions | Current density | Charge carrier processes | Threshold voltage

摘要：-doped nanowire MOSFET. The utilization of high-k | -side asymmetrical spacer halo-doped nanowire MOSFET | This paper presents a novel design and | analysis of a low-k source-side asymmetrical spacer halo | spacer materials in MOSFETs enhances electrostatic

关键词： Nanowire MOSFET | spacer | underlap | fringing fields | halo doping

摘要：In automotive electronic water pumps, MOSFET | engine will cause the electronic water pump MOSFET to | overheating failure of MOSFET, a thermal simulation model of | printed circuit board MOSFET for automotive electronic | software. The temperature rise characteristics of MOSFET

关键词： Electronic water pump | FLUENT | MOSFET | Void rates | Thermal resistance | TEMPERATURE

摘要： introduces the basic working principle of SiC MOSFET and | control source of SiC MOSFET model under different | characteristics of SiC MOSFET is significantly temperature | With the continuous development of science and | technology, the performance requirements of power

关键词： SiC MOSFET | Static characteristic | PSpice model | Temperature

摘要：-oxide-semiconductor field-effect transistors (mosfets | the analytical modeling of SiC mosfet switching | parameters for SiC mosfet switching transient modeling. In | the existing analytical models for SiC mosfet | higher switching speed of silicon carbide (SiC) metal