NSTL国家科技图书文献中心

1. The impact of amorphous-crystal interface on photoresponse in oxide semiconductor InGaZnO 4 NSTL国家科技图书文献中心

Du, Bingfeng | Lei, Hangyu ... - 《Journal of Alloys and Compounds》 - 2025,1010 - 177200～ - 共4页

摘要： an amorphous-crystal interface in an InGaZnO(4)film | The photoresponse of an oxide semiconductor is | influenced by lattice distortion, which can be adjusted | through atomic coordination status. Typically, the | modulation of atomic coordination and photoresponse

关键词： Photoresponse | Amorphous-crystal interface | InGaZnO (4)

2. A surface-potential-based electrical model for amorphous InGaZnO electric-double-layer transistors with electrolyte insulation NSTL国家科技图书文献中心

Xu, Piao-Rong | Zeng, Qing-Min ... - 《The European physical journal.Applied physics》 - 2025,100 - 共8页

摘要： amorphous InGaZnO* EDLTs is proposed in this paper. It is* | potential and drain current in the amorphous InGaZnO* EDLTs* | The electric-double-layer transistors (EDLTs | ) have attracted much attention on achieving ultra-high | -density charge accumulation and low operating voltage

关键词： Electric double layer | InGaZnO | surface potential | current model | electrolyte | thin-film transistors

3. Effect of SiO_2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications NSTL国家科技图书文献中心

Seung Joo Myoung | Dong Hyeop Shin ... - 《CERAMICS INTERNATIONAL》 - 2025,51(6) - 7651～7656 - 共6页

摘要： with memristors, we utilized InGaZnO* (IGZO) flms with* | To achieve progressive resistance modulation | a Pd top electrode to form a Schottky barrier at | the interface. As oxygen vacancies (V_O) were | ionized and recombined in the IGZO layer depending on

关键词： Analog switching | InGaZnO | Synaptic behavior | SiO_2 interfacial layer

4. High Memory Window, Dual-Gate Amorphous InGaZnO Thin-Film Transistor with Ferroelectric Gate Insulator NSTL国家科技图书文献中心

Samiran Roy | Md Mobaidul Islam ... - 《Physica status solidi,A.Applications and materials science ePSS》 - 2025,222(4) - 2400638.1～2400638.9 - 共9页 - 被引量：2

摘要： presents amorphous InGaZnO* (a-IGZO) ferroelectric* | Ferroelectric (FE) hafnium zirconium oxide | (HZO) thin-film transistors (TFTs) are of increasing | interest for next-generation memory and computing | applications. However, these devices face challenges in

关键词： amorphous InGaZnO | electrostatic coupling | ferroelectric dielectric dual-gate thin-film transistors | hafnium zirconium oxide | spray pyrolysis

5. Electro-Optical InGaZnO Synaptic Transistor with Solid State Electrolyte for Pain Perception NSTL国家科技图书文献中心

Xiaoqian Li | Xingqi Ji ... - 《Advanced Electronic Materials》 - 2025,11(2) - 202400356～ - 共12页 - 被引量：1

摘要：Integrating pain perception into wearable | electronics or humanoid robots within artificial | neuromorphic systems is highly desirable, as it allows for | the identification of harmful stimuli and the | generation of appropriate responses. In this study

关键词： InGaZnO synaptic transistor | Solid state electrolyte | Pain perception | Pavlov training | Visual imaging

6. Current and Gate Capacitance Models of Amorphous InGaZnO Transistors With Double-Layer Electrolytic Gate Insulation NSTL国家科技图书文献中心

Lu Wang | Piao-Rong Xu ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 683～689 - 共7页 - 被引量：1

摘要： drain current of amorphous InGaZnO* (a-IGZO) EDLGITs* | Electrolytic double-layer gate insulation | transistors (EDLGITs) have gained significant attention | recently due to their features for achieving high-density | charge accumulation and low operating voltage. This is

关键词： Capacitance | Logic gates | Electrolytes | Electric potential | Voltage | Insulators | Resistance | Ions | Transistors | Impedance

7. Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors NSTL国家科技图书文献中心

Yize Sun | Shucheng Zhang ... - 《IEEE Transactions on Electron Devices》 - 2025,72(3) - 1097～1103 - 共7页

摘要： integrated 2T1C memory cells with InGaZnO* TFTs and* | Back-end-of-line (BEOL) compatible and high | -performance thin-film transistors (TFTs) and emer- ging | memory devices trigger significant interest in their | integration into 3-D computing and memory systems. In this

关键词： Transistors | Switches | Thin film transistors | Microprocessors | Three-dimensional printing | Nonvolatile memory | Ferroelectric films | Capacitors | Zirconium | Sun

8. Adaptive frequency driving scan driver based on a‐InGaZnO TFTs for extremely low‐power displays NSTL国家科技图书文献中心

Jinho Moon | Hyunwoo Kim ... - 《Journal of the Society for Information Display》 - 2025,33(1/3) - 74～82 - 共9页

摘要：Abstract In this paper, we propose a novel | scan driver combined with a logic circuit using | amorphous indiumgalliumzincoxide (aInGaZnO) thinfilm | transistors (TFTs) in order to enhance the electrical | stability and reduce power consumption in display panels

关键词： aInGaZnO TFTs | low power consumption | masking method | scan driver

9. Improved Stability of Pr-Doped Amorphous InGaZnO₄ Thin-Film Transistors Under Negative Bias Illumination Stress NSTL国家科技图书文献中心

Shujiong Hao | Dongli Zhang ... - 《IEEE Electron Device Letters》 - 2025,46(3) - 420～423 - 共4页

摘要：Negative bias illumination stress (NBIS | ) instability is an important issue to overcome for the | application of amorphous InGaZnO4 (a-IGZO) thin-film | transistors (TFTs) in flat-panel displays. In this work | , TFTs based on praseodymium (Pr)-doped a-IGZO were

关键词： Thin film transistors | Thermal stability | Degradation | Annealing | Stress | Metals | Lighting | Logic gates | Stability criteria | Atmospheric measurements

10. Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors NSTL国家科技图书文献中心

Kunlin Cai | Yuan Li ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 690～697 - 共8页

摘要：The vertical channel-all-around (CAA) field | -effect transistor (FET) based on indium-gallium-zinc | -oxide (IGZO) shows great promise for applications in | novel dynamic random access memory architectures. In | this work, the impact of density of states (DOS) on

关键词： Electrons | Performance evaluation | Tail | Fabrication | Data models | Computational modeling | Random access memory | Doping | Threshold voltage | Logic gates