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1. Oxidation anisotropy of 4H-SiC wafers during chemical-mechanical polishing NSTL国家科技图书文献中心

Wang, Wantang |  Lu, Xuesong... -  《Materials science in semiconductor processing》 - 2025,185(Pt.1) - 共5页

摘要:-SiC wafers, chemical- mechanical polishing (CMP) is |  process is the synergy of wet oxidation and mechanical |  efficient polishing of 4H-SiC wafers. | , damage-free surface, and global planarization. The CMP |  is critical to high-efficiency double-side CMP. In
关键词: 4H-SiC wafers |  Chemical-mechanical polishing |  Oxidation anisotropy

2. Modeling of surface microtopography evolution in chemical mechanical polishing considering chemical-mechanical synergy NSTL国家科技图书文献中心

Yang, Ke |  Huang, Ning... -  《Tribology International》 - 2025,201 - 共12页 - 被引量:1

摘要: topic in chemical mechanical polishing, yet no method |  chemical mechanical polishing processes. |  microtopography evolution considering chemical-mechanical |  synergy and polishing pad-workpiece random contact |  results indicate that under stronger chemical and
关键词: Chemical mechanical polishing |  Surface microtopography |  Chemical-mechanical synergy |  Power spectral density |  Numerical simulation

3. Equilibrium between chemical and mechanical parameters for single-crystal SiC in Electro-Fenton chemical-mechanical polishing NSTL国家科技图书文献中心

Deng, Jiayun |  Bai, Zilei... -  《Diamond and Related Materials》 - 2025,152 - 111979~ - 共10页

摘要: mechanical polishing (EF-CMP) process for single-crystal |  of chemical-mechanical synergistic action, the aim |  the chemical and mechanical effects to fine-tune the |  intensity of the mechanical action during polishing |  principles of chemical-mechanical synergy achieves
关键词: Single-crystal SiC |  Electro-Fenton reaction |  Chemical mechanical polishing |  Chemical-mechanical synergy action theory

4. Effect of pretreatment of chemical mechanical polishing slurry on surface quality of Al_2O_3/TiO_2 nanolaminates NSTL国家科技图书文献中心

Xiaoju Men |  Jinhui Yang... -  《Tenth Symposium on Novel Optoelectronic Detection Technology and Applications,Part Three of Three Parts》 -  Symposium on Novel Optoelectronic Detection Technology and Applications - 2025, - 1351149.1~1351149.8 - 共8页

摘要: planarization are cornerstones. Chemical mechanical polishing |  optimize the polishing process used at present to obtain |  a polishing method suitable for Al_2O_3/TiO_2 |  effects of pH of polishing liquid, rotating speed of |  polishing disc, flow rate of polishing liquid and pre
关键词: Chemical mechanical polishing |  Al_2O_3/TiO_2 nanolaminates |  Surface quality

5. Samarium-Doped Ceria Nanospheres Prepared via Solvothermal Method and the Chemical Mechanical Polishing Properties NSTL国家科技图书文献中心

Wang, Zhenyang |  Wang, Tongqing... -  《Electronic Materials Letters》 - 2025,21(2) - 252~259 - 共8页

摘要:As a crucial abrasive in chemical mechanical |  polishing (CMP), ceria has garnered significant attention |  solvothermal method and their CMP performance on dielectric |  regarding its preparation method and surface modification |  methods. This research investigates the properties for
关键词: Samarium-doped ceria |  Ceria nanosphere |  Chemical mechanical polishing |  Selection ratio

6. Experimental study of chemical mechanical polishing of polycrystalline diamond based on photo-Fenton reaction NSTL国家科技图书文献中心

Luo, Ziyuan |  Lu, Jiabin... -  《Materials science in semiconductor processing》 - 2025,186 - 共13页 - 被引量:1

摘要: proposes a chemical mechanical polishing (CMP) method for |  excellent properties also make polishing the PCD surface a |  challenge. Traditional polishing methods struggle to |  single-factor polishing experiments, the effects of |  concentrations of H2O2, abrasive particle size, polishing
关键词: Polycrystalline diamond |  Photo-Fenton reaction |  Chemical mechanical polishing |  Processing parameters

7. Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives NSTL国家科技图书文献中心

Chen, Xiangyan |  Zhang, Zhenyu... -  《Journal of Physics,D.Applied Physics》 - 2025,58(2) - 共33页

摘要: chemical mechanical polishing. Compared with conventional |  mechanical removal by alumina and silica, rare earth |  via their special chemical activity, without | , polishing performance of rare earth abrasives depends on | , microscale topological structure, configuration of chemical
关键词: rare earth abrasives |  chemical mechanical polishing |  performance |  energy field-assisted polishing |  atomic surface

8. Evaluation of chemical mechanical polishing characteristics using mixed abrasive slurry: A study on polishing behavior and material removal mechanism NSTL国家科技图书文献中心

Xiaoxiao Zhu |  Juxuan Ding... -  《Applied Surface Science》 - 2025,679(Jan.15) - 161157.1~161157.11 - 共11页

摘要:Chemical mechanical polishing (CMP) is |  interfacial chemical reactions during the polishing process |  environmentally friendly method of improving polishing |  polishing experiments showed that compared with single | ) decreased from 26.4 run to 0.6 nm after polishing. An
关键词: Chemical mechanical polishing (CMP) |  Ceria abrasive |  Diamond abrasive |  Interfacial chemical reaction |  Material removal mechanism

9. Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical-mechanical polishing NSTL国家科技图书文献中心

Qiubo Li |  Shouzhi Wang... -  《Applied Surface Science》 - 2025,679(Jan.15) - 161207.1~161207.8 - 共8页 - 被引量:1

摘要: proposes an ICP etching-chemical-mechanical polishing |  (CMP) strategy to efficiently produce GaN single |  CMP eliminates impurities and defects from dry | , and CMP introduces no new damage to the substrate | As third-generation semiconductors advance
关键词: Gallium nitride |  ICP etching |  Subsurface damage |  Material removal |  Chemical mechanical polishing

10. Effect of 3-amino-1,2,4-triazole and triethylenetetramine on silicon backside thinning chemical mechanical polishing NSTL国家科技图书文献中心

Qiu, Yuxuan |  Nie, Shenao... -  《Materials science in semiconductor processing》 - 2025,185(Pt.1) - 共14页

摘要:. In the chemical mechanical polishing (CMP) process |  level of polishing effect based on requirements for |  on the research of silicon thinning CMP, and |  conventional silicon wafer CMP slurry cannot meet the speed |  requirements for silicon backside thinning CMP. This paper
关键词: Chemical mechanical polishing |  Silicon wafer |  Backside thinning |  Removal rate |  Surface quality
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