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1. Hydraulic Pastes of Alkali-Activated Waste Glass and Limestone Cement Using in Situ Caustification NSTL国家科技图书文献中心

L.E.Menchaca-Ballina... |  J.I.Escalante-Garcia -  《Proceedings of the 75th RILEM Annual Week 2021: Advances in sustainable construction materials and structures》 -  RILEM Annual Week (Conference) - 2023, - 656~666 - 共11页

摘要: activation for Si02-rich precursors such as waste glass to | One-part waste glass(WG)and limestone(LS | )alkali-activated cements were investigated in pastes |  using powdered activators CaO+Na2CO3.9 formulations of |  pastes were selected from a full factorial experimental
关键词: Alkali-activated cement |  Waste glass |  Silica gel |  Polymerized C-S-H |  C-(N)-S-H |  SiC-2-rich precursor

2. Effect of Zr on the Microstructure and High-Temperature Phase Separation Evolution of SiOC Aerogels NSTL国家科技图书文献中心

Han, Yuqing |  Wu, Youqing... -  《Langmuir: The ACS Journal of Surfaces and Colloids》 - 2023,39(45) - 15950~15961 - 共12页

摘要: zirconyl chloride octahydrate (ZrOCl28H(2)O |  organic-inorganic precursor aerogel. Moreover, the three |  high specific surface area of 273.52 m(2)/g, a high |  graphitization process of free carbon and the growth of SiC |  the SiOxCy matrix structure generated oxygen-rich
关键词: THERMAL INSULATION |  RAMAN-SPECTROSCOPY |  COMPOSITES |  ZIRCONIA |  NANOSTRUCTURE |  PERFORMANCE |  RESISTANCE |  PYROLYSIS |  STRENGTH

3. Production of graphitic carbons from plant-based SiC/C nanocomposites for Li-ion batteries EI 工程索引 NSTL国家科技图书文献中心

Haluska O. |  Mesceriakove S.-M.... -  《Materials Chemistry and Physics》 - 2023,296 - 共5页

摘要: magnesiothermic reduction into carbon-rich nanostructured |  further utilized as a precursor for the production of |  carbon (1–26 wt%) in the SiC/C composite. The GC |  (1 and 2 C) compared with commercial graphite, and | © 2022 The AuthorsBarley husks are a
关键词: Biogenic silicon carbide |  Biomass |  Graphite |  Induction annealing |  Li-ion batteries

4. Low-surface-temperature jump behavior of C/SiC composites prepared via precursor impregnation and pyrolysis in high-enthalpy plasma flows SCIE Web of Science核心 SCOPUS Scopus数据库 EI 工程索引 NSTL国家科技图书文献中心

Zhao, Xing |  Cao, Yejie... -  《Journal of the European Ceramic Society》 - 2021,41(15) - 7601~7609 - 共9页

摘要:The response of C/SiC composites prepared via |  precursor impregnation and pyrolysis was investigated in a |  5.7 MW/m(2) and low pressures of 4.5-6.6 kPa. The |  stagnation pressures, and their carbon-rich nature improved |  1 MW plasma wind tunnel. Under a considerable aero
关键词: C/SiC composites |  Precursor impregnation and pyrolysis |  Plasma wind tunnel |  Surface-temperature jump |  High temperature corrosion

5. Enhanced hydrogen evolution reaction catalyzed by carbon‐rich Mo 4.84.8 Si 33 C 0.60.6 /C/SiC nanocomposites via a PDC approach NSTL国家科技图书文献中心

Feng Yao |  Yu Zhaoju... -  《Journal of the American Ceramic Society》 - 2020,103(2) - 1385~1395 - 共11页

摘要: In this study, mesoporous carbon‐rich Mo |  0.6 /C/SiC ceramic nanocomposites were |  successfully prepared via a single‐source precursor route |  2 (acac) 2 | ) was used as a pore former. The obtained carbon‐rich
关键词: carbon‐rich ceramic nanocomposites |  high BET surface area |  hydrogen evolution reaction |  nowotny phase

6. Molecular Gas in 21 and 30 mu m Sources: The 2 mm and 1.3 mm Spectra of IRAS 21318+5631 and 22272+5435 SCOPUS Scopus数据库 SCIE Web of Science核心 NSTL国家科技图书文献中心

Zhang, Yong -  《The Astrophysical journal》 - 2020,898(2) - 共12页

摘要: molecular abundances. IRAS 22272+5435 shows stronger SiC(2 |  precursor of the carriers of the two dust features. The |  species that would be unexpected in a normal C-rich star |  carbon-rich and has experienced more efficient dust | The carriers of the 21 and 30 mu m emission
关键词: Spectral line identification |  Circumstellar matter |  Interstellar molecules |  Asymptotic giant branch |  Post-asymptotic giant branch

7. In situ synthesis of B4C-SiC, B4C-TiB2, and B4C-ZrB2 composites from organic-inorganic hybrid precursor via a simple bottom-up approach SCOPUS Scopus数据库 EI 工程索引 SCIE Web of Science核心 NSTL国家科技图书文献中心

Parlakyigit, Abdulla... |  Ergun, Celaletdin -  《Journal of Sol-Gel Science and Technology》 - 2019,92(3) - 745~759 - 共15页

摘要:-rich precursor compositions, whereas free carbon |  carbon-rich compositions (B/C:2/1). As the carbon |  low-cost boric acid and a sucrose-based precursor |  (Zr) species. The precursor solution was first dried |  appeared in the sucrose-rich compositions. The B4C
关键词: Boron carbide |  In situ composite |  Bottom-up approach |  Silicon carbide |  Titanium diboride |  Zirconium diboride

8. Understanding of fission products transport in SiC layer of TRISO fuels by nanoscale characterization and modeling NSTL国家科技图书文献中心

Meher, S. |  van Rooyen, I. J.... -  《Journal of Nuclear Materials: Materials Aspects of Fission and Fusion》 - 2019,527 - 共7页

摘要: and AGR-2 experiments. The SiC layer is the primary |  product transport in the silicon carbide (SiC) layer of |  the SiC layer and fission products have been |  observed. Previously, intragranular precipitates rich in |  irradiated SiC grains. More recent studies reported
关键词: Intergranular |  Intragranular |  Fission product transport |  TRISO |  Pd3Si |  Silicon carbide

9. AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range SCOPUS Scopus数据库 SCIE Web of Science核心 NSTL国家科技图书文献中心

Sebastian Tamariz |  Denis Martin... -  《Journal of Crystal Growth》 - 2017,476 - 58~63 - 共6页

摘要: temperature for N-rich conditions. ? Influence of V/III |  over 30 × 30 μm 2 . Abstract We present a |  nitrogen precursor in the high temperature range. We |  like SiC crystallites. A careful in situ cleaning | Highlights ? Thermal stability of AlN in ultra
关键词: A3. Molecular beam epitaxy |  B1. Nitrides |  AlN on silicon |  Ammonia molecular beam epitaxy |  A1. Reflection high energy electron diffraction

10. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth SCIE Web of Science核心 SCOPUS Scopus数据库 NSTL国家科技图书文献中心

Anusha Balachandran |  Haizheng Song... -  《Journal of Crystal Growth》 - 2016,448 - 97~104 - 共8页

摘要: growth on nearly on-axis ( ± 0.5 ° ) 4H–SiC substrates | -controlled. At C/Si<2, R g was weakly dependent on the |  etch rate of SiC by SiF 4 with increasing C/Si due to |  performance of SiC bipolar electronic devices. Highlights |  ? We report high quality nearly on-axis SiC growth
关键词: A1. Raman characterization |  A3. Chemical vapor deposition process |  A3. On-axis SiC growth |  A3. SiC epitaxy |  B1. Tetrafluorosilane
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